FUXINSEMI FD965S is a FD965S from FUXINSEMI, part of the Bipolar Transistors - BJT. It is designed for 20V 750mW 1000@500mA,2V 5A NPN SOT-23 Bipolar Transistors - BJT ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 20V
- Power Dissipation (Pd): 750mW
- DC Current Gain (hFE@Ic,Vce): 1000@500mA,2V
- Collector Current (Ic): 5A
- Transition Frequency (fT): 150MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): [email protected],3A
- Transistor Type: NPN
- Operating Temperature: -55℃~+150℃
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.03 grams.
Full Specifications of FD965S
| Model Number | FD965S |
| Model Name | FUXINSEMI FD965S |
| Category | Bipolar Transistors - BJT |
| Brand | FUXINSEMI |
| Description | 20V 750mW 1000@500mA,2V 5A NPN SOT-23 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.030 grams / 0.001058 oz |
| Package / Case | SOT-23 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | - |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 20V |
| Power Dissipation (Pd) | 750mW |
| DC Current Gain (hFE@Ic,Vce) | 1000@500mA,2V |
| Collector Current (Ic) | 5A |
| Transition Frequency (fT) | 150MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | [email protected],3A |
| Transistor Type | NPN |
| Operating Temperature | -55℃~+150℃ |
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