GL GL80N10A4 is a GL80N10A4 from GL, part of the MOSFETs. It is designed for 100V 80A 7.2mΩ@10V,40A 125W 1.7V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 80A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 7.2mΩ@10V,40A
- Power Dissipation (Pd): 125W
- Gate Threshold Voltage (Vgs(th)@Id): 1.7V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 23pF@50V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 4.2nF@50V
- Total Gate Charge (Qg@Vgs): 65nC@10V
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.46 grams.
More on GL80N10A4
Full Specifications of GL80N10A4
| Model Number | GL80N10A4 |
| Model Name | GL GL80N10A4 |
| Category | MOSFETs |
| Brand | GL |
| Description | 100V 80A 7.2mΩ@10V,40A 125W 1.7V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.460 grams / 0.016226 oz |
| Package / Case | TO-252-2 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | - |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 80A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 7.2mΩ@10V,40A |
| Power Dissipation (Pd) | 125W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.7V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF@50V |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 4.2nF@50V |
| Total Gate Charge (Qg@Vgs) | 65nC@10V |
| Operating Temperature | - |