GOFORD G080N10T is a G080N10T from GOFORD, part of the MOSFETs. It is designed for 100V 180A 5.8mΩ@10V 2.5V 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 180A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5.8mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.87 grams.
More on G080N10T
Full Specifications of G080N10T
| Model Number | G080N10T |
| Model Name | GOFORD G080N10T |
| Category | MOSFETs |
| Brand | GOFORD |
| Description | 100V 180A 5.8mΩ@10V 2.5V 1PCSNChannel TO-220 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.870 grams / 0.101236 oz |
| Package / Case | TO-220 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 180A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 5.8mΩ@10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V |
| Type | 1PCSNChannel |