GOFORD G1002L is a G1002L from GOFORD, part of the MOSFETs. It is designed for 100V 2A 1.3W 190mΩ 2V@250uA 1PCSNChannel SOT-23-3L MOSFETs ROHS. This product comes in a SOT-23-3L package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 2A
- Power Dissipation (Pd): 1.3W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 190mΩ
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 413pF@50V
- Total Gate Charge (Qg@Vgs): 10nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.039 grams.
More on G1002L
Full Specifications of G1002L
| Model Number | G1002L |
| Model Name | GOFORD G1002L |
| Category | MOSFETs |
| Brand | GOFORD |
| Description | 100V 2A 1.3W 190mΩ 2V@250uA 1PCSNChannel SOT-23-3L MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.039 grams / 0.001376 oz |
| Package / Case | SOT-23-3L |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 2A |
| Power Dissipation (Pd) | 1.3W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 190mΩ |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 413pF@50V |
| Total Gate Charge (Qg@Vgs) | 10nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |
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