GOFORD GC11N65F is a GC11N65F from GOFORD, part of the MOSFETs. It is designed for 650V 11A 31.3W 360mΩ@10V,5.5A 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS. This product comes in a TO-220F-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 11A
- Power Dissipation (Pd): 31.3W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 360mΩ@10V,5.5A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 901pF@50V
- Total Gate Charge (Qg@Vgs): 21nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.92 grams.
More on GC11N65F
Full Specifications of GC11N65F
| Model Number | GC11N65F |
| Model Name | GOFORD GC11N65F |
| Category | MOSFETs |
| Brand | GOFORD |
| Description | 650V 11A 31.3W 360mΩ@10V,5.5A 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.920 grams / 0.103 oz |
| Package / Case | TO-220F-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 650V |
| Continuous Drain Current (Id) | 11A |
| Power Dissipation (Pd) | 31.3W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 360mΩ@10V,5.5A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 901pF@50V |
| Total Gate Charge (Qg@Vgs) | 21nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |
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