GOFORD GT125N10M is a GT125N10M from GOFORD, part of the MOSFETs. It is designed for 100V 130A 4.1mΩ@10V,60A 192W 4V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS. This product comes in a TO-263-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 130A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 4.1mΩ@10V,60A
- Power Dissipation (Pd): 192W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 15.1pF@50V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 6.1246nF@50V
- Total Gate Charge (Qg@Vgs): 101.6nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.68 grams.
More on GT125N10M
Full Specifications of GT125N10M
| Model Number | GT125N10M |
| Model Name | GOFORD GT125N10M |
| Category | MOSFETs |
| Brand | GOFORD |
| Description | 100V 130A 4.1mΩ@10V,60A 192W 4V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.680 grams / 0.05926 oz |
| Package / Case | TO-263-2 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | - |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 130A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.1mΩ@10V,60A |
| Power Dissipation (Pd) | 192W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 15.1pF@50V |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 6.1246nF@50V |
| Total Gate Charge (Qg@Vgs) | 101.6nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |