GOSEMICON GBS65060TOB is a GBS65060TOB from GOSEMICON, part of the MOSFETs. It is designed for 650V 23A 50mΩ@10V,16.4A 192W 4V 1PCSNChannel TO-247 MOSFETs ROHS. This product comes in a TO-247 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 23A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@10V,16.4A
- Power Dissipation (Pd): 192W
- Gate Threshold Voltage (Vgs(th)@Id): 4V
- Reverse Transfer Capacitance (Crss@Vds): 4pF
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 4.3nF
- Total Gate Charge (Qg@Vgs): 95nC
- Operating Temperature: -55℃~+150℃
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on GBS65060TOB
Full Specifications of GBS65060TOB
| Model Number | GBS65060TOB |
| Model Name | GOSEMICON GBS65060TOB |
| Category | MOSFETs |
| Brand | GOSEMICON |
| Description | 650V 23A 50mΩ@10V,16.4A 192W 4V 1PCSNChannel TO-247 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-247 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | - |
| Drain Source Voltage (Vdss) | 650V |
| Continuous Drain Current (Id) | 23A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 50mΩ@10V,16.4A |
| Power Dissipation (Pd) | 192W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 4.3nF |
| Total Gate Charge (Qg@Vgs) | 95nC |
| Operating Temperature | -55℃~+150℃ |