D40V1 by HARRIS – Specifications

HARRIS D40V1 is a D40V1 from HARRIS, part of the Bipolar Transistors - BJT. It is designed for 250V 1.7W 60@20mA,10V 100mA NPN TO-202AB Bipolar Transistors - BJT ROHS. This product comes in a TO-202AB package and is sold as Bag-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 10uA
  • Collector-Emitter Breakdown Voltage (Vceo): 250V
  • Power Dissipation (Pd): 1.7W
  • DC Current Gain (hFE@Ic,Vce): 60@20mA,10V
  • Collector Current (Ic): 100mA
  • Transistor Type: NPN
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@20mA,2mA
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of D40V1

Model NumberD40V1
Model NameHARRIS D40V1
CategoryBipolar Transistors - BJT
BrandHARRIS
Description250V 1.7W 60@20mA,10V 100mA NPN TO-202AB Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-202AB
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)10uA
Collector-Emitter Breakdown Voltage (Vceo)250V
Power Dissipation (Pd)1.7W
DC Current Gain (hFE@Ic,Vce)60@20mA,10V
Collector Current (Ic)100mA
Transistor TypeNPN
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)1V@20mA,2mA
Operating Temperature-55℃~+150℃@(Tj)

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