HARRIS IRF532 is a IRF532 from HARRIS, part of the MOSFETs. It is designed for 100V 12A 79W 230mΩ@8.3A,10V 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 12A
- Power Dissipation (Pd): 79W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 230mΩ@8.3A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 600pF@25V
- Total Gate Charge (Qg@Vgs): 26nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRF532
Full Specifications of IRF532
| Model Number | IRF532 |
| Model Name | HARRIS IRF532 |
| Category | MOSFETs |
| Brand | HARRIS |
| Description | 100V 12A 79W 230mΩ@8.3A,10V 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-220AB |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 12A |
| Power Dissipation (Pd) | 79W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 230mΩ@8.3A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 600pF@25V |
| Total Gate Charge (Qg@Vgs) | 26nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |