HARRIS RFP4N05 is a RFP4N05 from HARRIS, part of the MOSFETs. It is designed for 50V 4A 800mΩ@4A,10V 25W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 50V
- Continuous Drain Current (Id): 4A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 800mΩ@4A,10V
- Power Dissipation (Pd): 25W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 200pF@25V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on RFP4N05
Full Specifications of RFP4N05
| Model Number | RFP4N05 |
| Model Name | HARRIS RFP4N05 |
| Category | MOSFETs |
| Brand | HARRIS |
| Description | 50V 4A 800mΩ@4A,10V 25W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-220 |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 50V |
| Continuous Drain Current (Id) | 4A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 800mΩ@4A,10V |
| Power Dissipation (Pd) | 25W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 200pF@25V |
| Operating Temperature | -55℃~+150℃@(Tj) |
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