HUASHUO HSBA70P06 is a HSBA70P06 from HUASHUO, part of the MOSFETs. It is designed for 60V 72A 150W 6mΩ@10V,20A 3V@250uA 1PCSPChannel PRPAK5x6 MOSFETs ROHS. This product comes in a PRPAK5x6 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 72A
- Power Dissipation (Pd): 150W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 6mΩ@10V,20A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 50pF@30V
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 5.2nF@30V
- Total Gate Charge (Qg@Vgs): 85nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.37 grams.
More on HSBA70P06
Full Specifications of HSBA70P06
Model Number | HSBA70P06 |
Model Name | HUASHUO HSBA70P06 |
Category | MOSFETs |
Brand | HUASHUO |
Description | 60V 72A 150W 6mΩ@10V,20A 3V@250uA 1PCSPChannel PRPAK5x6 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.370 grams / 0.013051 oz |
Package / Case | PRPAK5x6 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | - |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 72A |
Power Dissipation (Pd) | 150W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 6mΩ@10V,20A |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 50pF@30V |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 5.2nF@30V |
Total Gate Charge (Qg@Vgs) | 85nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |