HUAYI HYG180N10LS1P is a HYG180N10LS1P from HUAYI, part of the MOSFETs. It is designed for 100V 50A 16.5mΩ@10V,25A 93.7W 1.8V@250uA 1PCSNChannel TO-220FB-3 MOSFETs ROHS. This product comes in a TO-220FB-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 50A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 16.5mΩ@10V,25A
- Power Dissipation (Pd): 93.7W
- Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 22.8pF@25V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.606nF@25V
- Total Gate Charge (Qg@Vgs): 11.6nC@10V
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.07 grams.
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Full Specifications of HYG180N10LS1P
| Model Number | HYG180N10LS1P |
| Model Name | HUAYI HYG180N10LS1P |
| Category | MOSFETs |
| Brand | HUAYI |
| Description | 100V 50A 16.5mΩ@10V,25A 93.7W 1.8V@250uA 1PCSNChannel TO-220FB-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.070 grams / 0.073017 oz |
| Package / Case | TO-220FB-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | - |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 50A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 16.5mΩ@10V,25A |
| Power Dissipation (Pd) | 93.7W |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.8V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 22.8pF@25V |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.606nF@25V |
| Total Gate Charge (Qg@Vgs) | 11.6nC@10V |
| Operating Temperature | - |