2ED2108S06FXUMA1 by Infineon Technologies – Specifications

Infineon Technologies 2ED2108S06FXUMA1 is a 2ED2108S06FXUMA1 from Infineon Technologies, part of the Gate Drive ICs. It is designed for Half Bridge 1 290mA 100ns 35ns 10V~20V 700mA DSO-8 Gate Drive ICs ROHS. This product comes in a DSO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Driven Configuration: Half Bridge
  • Operating Temperature: -40℃~+125℃@(Ta)
  • Number of Drivers: 1
  • Load Type: IGBT;MOSFET
  • Peak Output Current(source): 290mA
  • Rise Time: 100ns
  • Fall Time: 35ns
  • Supply Voltage: 10V~20V
  • Peak Output Current(sink): 700mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.001 grams.

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Full Specifications of 2ED2108S06FXUMA1

Model Number2ED2108S06FXUMA1
Model NameInfineon Technologies 2ED2108S06FXUMA1
CategoryGate Drive ICs
BrandInfineon Technologies
DescriptionHalf Bridge 1 290mA 100ns 35ns 10V~20V 700mA DSO-8 Gate Drive ICs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.001 grams / 0.000035 oz
Package / CaseDSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Driven ConfigurationHalf Bridge
Operating Temperature-40℃~+125℃@(Ta)
Number of Drivers1
Load TypeIGBT;MOSFET
Peak Output Current(source)290mA
Rise Time100ns
Fall Time35ns
Supply Voltage10V~20V
Peak Output Current(sink)700mA

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