2N6763 by Infineon Technologies – Specifications

Infineon Technologies 2N6763 is a 2N6763 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 31A 150W 80mΩ@20A,10V 4V@1mA 1PCSNChannel TO-3 MOSFETs ROHS. This product comes in a TO-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 31A
  • Power Dissipation (Pd): 150W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 80mΩ@20A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@1mA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3nF@25V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on 2N6763

Full Specifications of 2N6763

Model Number2N6763
Model NameInfineon Technologies 2N6763
CategoryMOSFETs
BrandInfineon Technologies
Description60V 31A 150W 80mΩ@20A,10V 4V@1mA 1PCSNChannel TO-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)31A
Power Dissipation (Pd)150W
Drain Source On Resistance (RDS(on)@Vgs,Id)80mΩ@20A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@1mA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3nF@25V
Operating Temperature-55℃~+150℃@(Tj)

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