Infineon Technologies AIGB50N65F5ATMA1 is a AIGB50N65F5ATMA1 from Infineon Technologies, part of the IGBTs. It is designed for 50A 650V NPT(非穿通型) TO-263 IGBTs ROHS. This product comes in a TO-263 package and is sold as Tape & Reel (TR). Key features include:
- Collector Current (Ic): 50A
- Collector-Emitter Breakdown Voltage (Vces): 650V
- Type: NPT(非穿通型)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on AIGB50N65F5ATMA1
Full Specifications of AIGB50N65F5ATMA1
| Model Number | AIGB50N65F5ATMA1 |
| Model Name | Infineon Technologies AIGB50N65F5ATMA1 |
| Category | IGBTs |
| Brand | Infineon Technologies |
| Description | 50A 650V NPT(非穿通型) TO-263 IGBTs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-263 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Operating Temperature | - |
| Collector Current (Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Type | NPT(非穿通型) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Turn?on Switching Loss (Eon) | - |
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