AIGW50N65H5 by Infineon Technologies – Specifications

Infineon Technologies AIGW50N65H5 is a AIGW50N65H5 from Infineon Technologies, part of the IGBTs. It is designed for 270W 83A 650V TO-247-3-41 IGBTs ROHS. This product comes in a TO-247-3-41 package and is sold as Tube-packed. Key features include:

  • Power Dissipation (Pd): 270W
  • Turn?off Delay Time (Td(off)): 173ns
  • Turn?on Delay Time (Td(on)): 21ns
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Collector Current (Ic): 83A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 4V@500uA
  • Total Gate Charge (Qg@Ic,Vge): 116nC@50A,15V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge): 1.66V@50A,15V
  • Turn?off Switching Loss (Eoff): 0.16mJ
  • Turn?on Switching Loss (Eon): 0.45mJ
  • Input Capacitance (Cies@Vce): 2.8nF@25V

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on AIGW50N65H5

Full Specifications of AIGW50N65H5

Model NumberAIGW50N65H5
Model NameInfineon Technologies AIGW50N65H5
CategoryIGBTs
BrandInfineon Technologies
Description270W 83A 650V TO-247-3-41 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247-3-41
Package / ArrangeTube-packed
BatteryNo
ECCN-
Power Dissipation (Pd)270W
Turn?off Delay Time (Td(off))173ns
Turn?on Delay Time (Td(on))21ns
Operating Temperature-40℃~+175℃@(Tj)
Collector Current (Ic)83A
Collector-Emitter Breakdown Voltage (Vces)650V
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@500uA
Total Gate Charge (Qg@Ic,Vge)116nC@50A,15V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)1.66V@50A,15V
Diode Reverse Recovery Time (Trr)-
Turn?off Switching Loss (Eoff)0.16mJ
Turn?on Switching Loss (Eon)0.45mJ
Input Capacitance (Cies@Vce)2.8nF@25V
Diode Forward Voltage (Vf@If)-

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