AIKB30N65DF5ATMA1 by Infineon Technologies – Specifications

Infineon Technologies AIKB30N65DF5ATMA1 is a AIKB30N65DF5ATMA1 from Infineon Technologies, part of the IGBTs. It is designed for 188W 55A 650V FS(Field Stop) TO-263-3 IGBTs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:

  • Turn?off Delay Time (Td(off)): 188ns
  • Power Dissipation (Pd): 188W
  • Turn?on Delay Time (Td(on)): 25ns
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Collector Current (Ic): 55A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.1V@15V,30A
  • Total Gate Charge (Qg@Ic,Vge): 70nC
  • Diode Reverse Recovery Time (Trr): 67ns
  • Turn?off Switching Loss (Eoff): 0.1mJ
  • Turn?on Switching Loss (Eon): 0.33mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of AIKB30N65DF5ATMA1

Model NumberAIKB30N65DF5ATMA1
Model NameInfineon Technologies AIKB30N65DF5ATMA1
CategoryIGBTs
BrandInfineon Technologies
Description188W 55A 650V FS(Field Stop) TO-263-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))188ns
Power Dissipation (Pd)188W
Turn?on Delay Time (Td(on))25ns
Operating Temperature-40℃~+175℃@(Tj)
Collector Current (Ic)55A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,30A
Total Gate Charge (Qg@Ic,Vge)70nC
Diode Reverse Recovery Time (Trr)67ns
Turn?off Switching Loss (Eoff)0.1mJ
Turn?on Switching Loss (Eon)0.33mJ

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