Infineon Technologies AUIRF2807 is a AUIRF2807 from Infineon Technologies, part of the MOSFETs. It is designed for 75V 75A 13mΩ@43A,10V 230W 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 75V
- Continuous Drain Current (Id): 75A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 13mΩ@43A,10V
- Power Dissipation (Pd): 230W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 3.82nF@25V
- Total Gate Charge (Qg@Vgs): 160nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on AUIRF2807
Full Specifications of AUIRF2807
Model Number | AUIRF2807 |
Model Name | Infineon Technologies AUIRF2807 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 75V 75A 13mΩ@43A,10V 230W 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-220AB |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 75V |
Continuous Drain Current (Id) | 75A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 13mΩ@43A,10V |
Power Dissipation (Pd) | 230W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 3.82nF@25V |
Total Gate Charge (Qg@Vgs) | 160nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
Compare Infineon Technologies - AUIRF2807 With Other 200 Models
Related Models - AUIRF2807 Alternative
- Infineon Technologies BSC047N08NS3G
- Infineon Technologies BSC320N20NS3G
- Infineon Technologies BSC070N10NS3G
- Infineon Technologies BSC0702LS
- Infineon Technologies BSC060N10NS3G
- Infineon Technologies BSC054N04NSG
- Infineon Technologies BSC030N08NS5
- Infineon Technologies BSC010N04LS
- Infineon Technologies IPA50R280CE
- Infineon Technologies IPB60R099CP