Infineon Technologies AUIRF3205 is a AUIRF3205 from Infineon Technologies, part of the MOSFETs. It is designed for 55V 75A 8mΩ@62A,10V 200W 4V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS. This product comes in a TO-220AB-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 55V
- Continuous Drain Current (Id): 75A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@62A,10V
- Power Dissipation (Pd): 200W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 3.247nF@25V
- Total Gate Charge (Qg@Vgs): 146nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3.1 grams.
More on AUIRF3205
Full Specifications of AUIRF3205
Model Number | AUIRF3205 |
Model Name | Infineon Technologies AUIRF3205 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 55V 75A 8mΩ@62A,10V 200W 4V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 3.100 grams / 0.109349 oz |
Package / Case | TO-220AB-3 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 55V |
Continuous Drain Current (Id) | 75A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 8mΩ@62A,10V |
Power Dissipation (Pd) | 200W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 3.247nF@25V |
Total Gate Charge (Qg@Vgs) | 146nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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