AUIRFR120Z by Infineon Technologies – Specifications

Infineon Technologies AUIRFR120Z is a AUIRFR120Z from Infineon Technologies, part of the MOSFETs. It is designed for 100V 8.7A 35W 190mΩ@5.2A,10V 4V@25uA 1PCSNChannel DPAK MOSFETs ROHS. This product comes in a DPAK package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 8.7A
  • Power Dissipation (Pd): 35W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 190mΩ@5.2A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@25uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 310pF@25V
  • Total Gate Charge (Qg@Vgs): 10nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on AUIRFR120Z

Full Specifications of AUIRFR120Z

Model NumberAUIRFR120Z
Model NameInfineon Technologies AUIRFR120Z
CategoryMOSFETs
BrandInfineon Technologies
Description100V 8.7A 35W 190mΩ@5.2A,10V 4V@25uA 1PCSNChannel DPAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDPAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)8.7A
Power Dissipation (Pd)35W
Drain Source On Resistance (RDS(on)@Vgs,Id)190mΩ@5.2A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@25uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)310pF@25V
Total Gate Charge (Qg@Vgs)10nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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