AUIRFR5505-IR by Infineon Technologies – Specifications

Infineon Technologies AUIRFR5505-IR is a AUIRFR5505-IR from Infineon Technologies, part of the MOSFETs. It is designed for 55V 18A 110mΩ@9.6A,10V 57W 4V@250uA 1PCSPChannel DPAK MOSFETs ROHS. This product comes in a DPAK package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 18A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 110mΩ@9.6A,10V
  • Power Dissipation (Pd): 57W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 650pF@25V
  • Total Gate Charge (Qg@Vgs): 32nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on AUIRFR5505-IR

Full Specifications of AUIRFR5505-IR

Model NumberAUIRFR5505-IR
Model NameInfineon Technologies AUIRFR5505-IR
CategoryMOSFETs
BrandInfineon Technologies
Description55V 18A 110mΩ@9.6A,10V 57W 4V@250uA 1PCSPChannel DPAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDPAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)55V
Continuous Drain Current (Id)18A
Drain Source On Resistance (RDS(on)@Vgs,Id)110mΩ@9.6A,10V
Power Dissipation (Pd)57W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)650pF@25V
Total Gate Charge (Qg@Vgs)32nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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