BSB012N03LX3G by Infineon Technologies – Specifications

Infineon Technologies BSB012N03LX3G is a BSB012N03LX3G from Infineon Technologies, part of the MOSFETs. It is designed for 30V 1.2mΩ@30A,10V 2.2V@250uA 1PCSNChannel WDSON-3 MOSFETs ROHS. This product comes in a WDSON-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 39A;180A
  • Power Dissipation (Pd): 2.8W;89W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.2mΩ@30A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 16.9nF@15V
  • Total Gate Charge (Qg@Vgs): 169nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of BSB012N03LX3G

Model NumberBSB012N03LX3G
Model NameInfineon Technologies BSB012N03LX3G
CategoryMOSFETs
BrandInfineon Technologies
Description30V 1.2mΩ@30A,10V 2.2V@250uA 1PCSNChannel WDSON-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseWDSON-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)39A;180A
Power Dissipation (Pd)2.8W;89W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.2mΩ@30A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)16.9nF@15V
Total Gate Charge (Qg@Vgs)169nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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