BSB013NE2LXIXUMA1 by Infineon Technologies – Specifications

Infineon Technologies BSB013NE2LXIXUMA1 is a BSB013NE2LXIXUMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 25V 1.3mΩ@30A,10V 2V@250uA 1PCSNChannel WDSON-3 MOSFETs ROHS. This product comes in a WDSON-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 36A;163A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.3mΩ@30A,10V
  • Power Dissipation (Pd): 2.8W;57W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.4nF@12V
  • Total Gate Charge (Qg@Vgs): 62nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of BSB013NE2LXIXUMA1

Model NumberBSB013NE2LXIXUMA1
Model NameInfineon Technologies BSB013NE2LXIXUMA1
CategoryMOSFETs
BrandInfineon Technologies
Description25V 1.3mΩ@30A,10V 2V@250uA 1PCSNChannel WDSON-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseWDSON-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)25V
Continuous Drain Current (Id)36A;163A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.3mΩ@30A,10V
Power Dissipation (Pd)2.8W;57W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.4nF@12V
Total Gate Charge (Qg@Vgs)62nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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