BSB028N06NN3 G by Infineon Technologies – Specifications

Infineon Technologies BSB028N06NN3 G is a BSB028N06NN3 G from Infineon Technologies, part of the MOSFETs. It is designed for 60V 22A 2.2W 2.8mΩ@10V,30A 4V@102uA 1PCSNChannel MG-WDSON-2 MOSFETs ROHS. This product comes in a MG-WDSON-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 22A
  • Power Dissipation (Pd): 2.2W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.8mΩ@10V,30A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@102uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of BSB028N06NN3 G

Model NumberBSB028N06NN3 G
Model NameInfineon Technologies BSB028N06NN3 G
CategoryMOSFETs
BrandInfineon Technologies
Description60V 22A 2.2W 2.8mΩ@10V,30A 4V@102uA 1PCSNChannel MG-WDSON-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseMG-WDSON-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)22A
Power Dissipation (Pd)2.2W
Drain Source On Resistance (RDS(on)@Vgs,Id)2.8mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)@Id)4V@102uA
Type1PCSNChannel

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