BSB056N10NN3 G by Infineon Technologies – Specifications

Infineon Technologies BSB056N10NN3 G is a BSB056N10NN3 G from Infineon Technologies, part of the MOSFETs. It is designed for 100V 9A 5.6mΩ@10V,30A 2.8W 3.5V@100uA 1PCSNChannel MG-WDSON-2 MOSFETs ROHS. This product comes in a MG-WDSON-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 9A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.6mΩ@10V,30A
  • Power Dissipation (Pd): 2.8W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@100uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of BSB056N10NN3 G

Model NumberBSB056N10NN3 G
Model NameInfineon Technologies BSB056N10NN3 G
CategoryMOSFETs
BrandInfineon Technologies
Description100V 9A 5.6mΩ@10V,30A 2.8W 3.5V@100uA 1PCSNChannel MG-WDSON-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseMG-WDSON-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)9A
Drain Source On Resistance (RDS(on)@Vgs,Id)5.6mΩ@10V,30A
Power Dissipation (Pd)2.8W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@100uA
Type1PCSNChannel

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