BSB056N10NN3GXUMA1 by Infineon Technologies – Specifications

Infineon Technologies BSB056N10NN3GXUMA1 is a BSB056N10NN3GXUMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 5.6mΩ@30A,10V 3.5V@100uA 1PCSNChannel WDSON-3 MOSFETs ROHS. This product comes in a WDSON-3 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 100V
• Continuous Drain Current (Id): 9A;83A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 5.6mΩ@30A,10V
• Power Dissipation (Pd): 2.8W;78W
• Gate Threshold Voltage (Vgs(th)@Id): 3.5V@100uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 5.5nF@50V
• Total Gate Charge (Qg@Vgs): 74nC@10V
• Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.12 grams.