BSB165N15NZ3 G by Infineon Technologies – Specifications

Infineon Technologies BSB165N15NZ3 G is a BSB165N15NZ3 G from Infineon Technologies, part of the MOSFETs. It is designed for 150V 16.5mΩ@30A,10V 4V@110uA 1PCSNChannel MG-DSON-2(4.9x6.3)mm MOSFETs ROHS. This product comes in a MG-DSON-2(4.9x6.3)mm package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 150V
• Continuous Drain Current (Id): 9A;45A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 16.5mΩ@30A,10V
• Power Dissipation (Pd): 2.8W;78W
• Gate Threshold Voltage (Vgs(th)@Id): 4V@110uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 2.8nF@75V
• Total Gate Charge (Qg@Vgs): 35nC@10V
• Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.