BSC028N06NSSCATMA1 by Infineon Technologies – Specifications

Infineon Technologies BSC028N06NSSCATMA1 is a BSC028N06NSSCATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 100A 2.8mΩ@50A,10V 3.3V@50uA 1PCSNChannel TDSON-8 MOSFETs ROHS. This product comes in a TDSON-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 100A
  • Power Dissipation (Pd): 2.5W;83W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.8mΩ@50A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.3V@50uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.375nF@30V
  • Total Gate Charge (Qg@Vgs): 49nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of BSC028N06NSSCATMA1

Model NumberBSC028N06NSSCATMA1
Model NameInfineon Technologies BSC028N06NSSCATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description60V 100A 2.8mΩ@50A,10V 3.3V@50uA 1PCSNChannel TDSON-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTDSON-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)100A
Power Dissipation (Pd)2.5W;83W
Drain Source On Resistance (RDS(on)@Vgs,Id)2.8mΩ@50A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.3V@50uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.375nF@30V
Total Gate Charge (Qg@Vgs)49nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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