Infineon Technologies BSC067N06LS3 is a BSC067N06LS3 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 6.7mΩ@50A,10V 2.2V@35uA 1PCSNChannel TDSON-8 MOSFETs ROHS. This product comes in a TDSON-8 package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 15A;79A
- Power Dissipation (Pd): 2.5W;69W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 6.7mΩ@50A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 2.2V@35uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 5.1nF@30V
- Total Gate Charge (Qg@Vgs): 67nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on BSC067N06LS3
Full Specifications of BSC067N06LS3
Model Number | BSC067N06LS3 |
Model Name | Infineon Technologies BSC067N06LS3 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 60V 6.7mΩ@50A,10V 2.2V@35uA 1PCSNChannel TDSON-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TDSON-8 |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 15A;79A |
Power Dissipation (Pd) | 2.5W;69W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 6.7mΩ@50A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 2.2V@35uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 5.1nF@30V |
Total Gate Charge (Qg@Vgs) | 67nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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