BSC0804LSATMA1 by Infineon Technologies – Specifications

Infineon Technologies BSC0804LSATMA1 is a BSC0804LSATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 40A 9.6mΩ@20A,10V 83W 2.3V@36uA 1PCSNChannel TDSON-8 MOSFETs ROHS. This product comes in a TDSON-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 40A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.6mΩ@20A,10V
  • Power Dissipation (Pd): 83W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.3V@36uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.1nF@50V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on BSC0804LSATMA1

Full Specifications of BSC0804LSATMA1

Model NumberBSC0804LSATMA1
Model NameInfineon Technologies BSC0804LSATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description100V 40A 9.6mΩ@20A,10V 83W 2.3V@36uA 1PCSNChannel TDSON-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTDSON-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)40A
Drain Source On Resistance (RDS(on)@Vgs,Id)9.6mΩ@20A,10V
Power Dissipation (Pd)83W
Gate Threshold Voltage (Vgs(th)@Id)2.3V@36uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.1nF@50V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

Compare Infineon Technologies - BSC0804LSATMA1 With Other 200 Models

Related Models - BSC0804LSATMA1 Alternative

Scroll to Top