BSC080N03MSGATMA1 by Infineon Technologies – Specifications

Infineon Technologies BSC080N03MSGATMA1 is a BSC080N03MSGATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 8mΩ@30A,10V 2V@250uA 1PCSNChannel TDSON-8 MOSFETs ROHS. This product comes in a TDSON-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 13A;53A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@30A,10V
  • Power Dissipation (Pd): 2.5W;35W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.1nF@15V
  • Total Gate Charge (Qg@Vgs): 27nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on BSC080N03MSGATMA1

Full Specifications of BSC080N03MSGATMA1

Model NumberBSC080N03MSGATMA1
Model NameInfineon Technologies BSC080N03MSGATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description30V 8mΩ@30A,10V 2V@250uA 1PCSNChannel TDSON-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTDSON-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)13A;53A
Drain Source On Resistance (RDS(on)@Vgs,Id)8mΩ@30A,10V
Power Dissipation (Pd)2.5W;35W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.1nF@15V
Total Gate Charge (Qg@Vgs)27nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Infineon Technologies - BSC080N03MSGATMA1 With Other 200 Models

Related Models - BSC080N03MSGATMA1 Alternative

Scroll to Top