Infineon Technologies BSC100N03MSGATMA1 is a BSC100N03MSGATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 10mΩ@30A,10V 2V@250uA 1PCSNChannel TDSON-8 MOSFETs ROHS. This product comes in a TDSON-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 12A;44A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@30A,10V
- Power Dissipation (Pd): 2.5W;30W
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.7nF@15V
- Total Gate Charge (Qg@Vgs): 23nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on BSC100N03MSGATMA1
Full Specifications of BSC100N03MSGATMA1
Model Number | BSC100N03MSGATMA1 |
Model Name | Infineon Technologies BSC100N03MSGATMA1 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 30V 10mΩ@30A,10V 2V@250uA 1PCSNChannel TDSON-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TDSON-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 12A;44A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 10mΩ@30A,10V |
Power Dissipation (Pd) | 2.5W;30W |
Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.7nF@15V |
Total Gate Charge (Qg@Vgs) | 23nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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