BSC105N10LSFGATMA1 by Infineon Technologies – Specifications

Infineon Technologies BSC105N10LSFGATMA1 is a BSC105N10LSFGATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 156W 10.5mΩ@50A,10V 2.4V@110uA 1PCSNChannel TDSON-8 MOSFETs ROHS. This product comes in a TDSON-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 11.4A;90A
  • Power Dissipation (Pd): 156W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 10.5mΩ@50A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.4V@110uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.9nF@50V
  • Total Gate Charge (Qg@Vgs): 53nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of BSC105N10LSFGATMA1

Model NumberBSC105N10LSFGATMA1
Model NameInfineon Technologies BSC105N10LSFGATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description100V 156W 10.5mΩ@50A,10V 2.4V@110uA 1PCSNChannel TDSON-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTDSON-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)11.4A;90A
Power Dissipation (Pd)156W
Drain Source On Resistance (RDS(on)@Vgs,Id)10.5mΩ@50A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.4V@110uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.9nF@50V
Total Gate Charge (Qg@Vgs)53nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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