BSC120N03MS G by Infineon Technologies – Specifications

Infineon Technologies BSC120N03MS G is a BSC120N03MS G from Infineon Technologies, part of the MOSFETs. It is designed for 30V 11A 2.5W 12mΩ@10V,30A 2V@250uA 1PCSNChannel TDSON-8-EP(5x6) MOSFETs ROHS. This product comes in a TDSON-8-EP(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 11A
  • Power Dissipation (Pd): 2.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12mΩ@10V,30A
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of BSC120N03MS G

Model NumberBSC120N03MS G
Model NameInfineon Technologies BSC120N03MS G
CategoryMOSFETs
BrandInfineon Technologies
Description30V 11A 2.5W 12mΩ@10V,30A 2V@250uA 1PCSNChannel TDSON-8-EP(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTDSON-8-EP(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)11A
Power Dissipation (Pd)2.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)12mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel

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