BSC150N03LD by Infineon Technologies – Specifications

Infineon Technologies BSC150N03LD is a BSC150N03LD from Infineon Technologies, part of the MOSFETs. It is designed for 30V 8A 26W 15mΩ@20A,10V 2.2V@250uA 2 N-Channel TDSON-8 MOSFETs ROHS. This product comes in a TDSON-8 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 8A
  • Power Dissipation (Pd): 26W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 15mΩ@20A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 1.1nF@15V
  • Total Gate Charge (Qg@Vgs): 6.4nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of BSC150N03LD

Model NumberBSC150N03LD
Model NameInfineon Technologies BSC150N03LD
CategoryMOSFETs
BrandInfineon Technologies
Description30V 8A 26W 15mΩ@20A,10V 2.2V@250uA 2 N-Channel TDSON-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTDSON-8
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)8A
Power Dissipation (Pd)26W
Drain Source On Resistance (RDS(on)@Vgs,Id)15mΩ@20A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)1.1nF@15V
Total Gate Charge (Qg@Vgs)6.4nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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