BSC160N15NS5ATMA1 by Infineon Technologies – Specifications

Infineon Technologies BSC160N15NS5ATMA1 is a BSC160N15NS5ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 150V 56A 96W 16mΩ@28A,10V 4.6V@60uA 1PCSNChannel TDSON-8 MOSFETs ROHS. This product comes in a TDSON-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 56A
  • Power Dissipation (Pd): 96W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 16mΩ@28A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4.6V@60uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.82nF@75V
  • Total Gate Charge (Qg@Vgs): 23.1nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.14 grams.

More on BSC160N15NS5ATMA1

Full Specifications of BSC160N15NS5ATMA1

Model NumberBSC160N15NS5ATMA1
Model NameInfineon Technologies BSC160N15NS5ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description150V 56A 96W 16mΩ@28A,10V 4.6V@60uA 1PCSNChannel TDSON-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.140 grams / 0.004938 oz
Package / CaseTDSON-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)56A
Power Dissipation (Pd)96W
Drain Source On Resistance (RDS(on)@Vgs,Id)16mΩ@28A,10V
Gate Threshold Voltage (Vgs(th)@Id)4.6V@60uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.82nF@75V
Total Gate Charge (Qg@Vgs)23.1nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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