BSC883N03LS G by Infineon Technologies – Specifications

Infineon Technologies BSC883N03LS G is a BSC883N03LS G from Infineon Technologies, part of the MOSFETs. It is designed for 34V 3.8mΩ@30A,10V 2.2V@250uA 1PCSNChannel TDSON-8 MOSFETs ROHS. This product comes in a TDSON-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 34V
  • Continuous Drain Current (Id): 17A;98A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.8mΩ@30A,10V
  • Power Dissipation (Pd): 2.5W;57W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.8nF@15V
  • Total Gate Charge (Qg@Vgs): 34nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of BSC883N03LS G

Model NumberBSC883N03LS G
Model NameInfineon Technologies BSC883N03LS G
CategoryMOSFETs
BrandInfineon Technologies
Description34V 3.8mΩ@30A,10V 2.2V@250uA 1PCSNChannel TDSON-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTDSON-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)34V
Continuous Drain Current (Id)17A;98A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.8mΩ@30A,10V
Power Dissipation (Pd)2.5W;57W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.8nF@15V
Total Gate Charge (Qg@Vgs)34nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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