BSF134N10NJ3G by Infineon Technologies – Specifications

Infineon Technologies BSF134N10NJ3G is a BSF134N10NJ3G from Infineon Technologies, part of the MOSFETs. It is designed for 100V 13.4mΩ@30A,10V 3.5V@40uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 9A;40A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 13.4mΩ@30A,10V
  • Power Dissipation (Pd): 2.2W;43W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@40uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.3nF@50V
  • Total Gate Charge (Qg@Vgs): 30nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of BSF134N10NJ3G

Model NumberBSF134N10NJ3G
Model NameInfineon Technologies BSF134N10NJ3G
CategoryMOSFETs
BrandInfineon Technologies
Description100V 13.4mΩ@30A,10V 3.5V@40uA 1PCSNChannel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)9A;40A
Drain Source On Resistance (RDS(on)@Vgs,Id)13.4mΩ@30A,10V
Power Dissipation (Pd)2.2W;43W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@40uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.3nF@50V
Total Gate Charge (Qg@Vgs)30nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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