BSG0811NDATMA1 by Infineon Technologies – Specifications

Infineon Technologies BSG0811NDATMA1 is a BSG0811NDATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 25V 2.5W 3mΩ@10V,20A 2V@250uA 2 N-Channel TISON-8 MOSFETs ROHS. This product comes in a TISON-8 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 25V
• Continuous Drain Current (Id): 19A;41A
• Power Dissipation (Pd): 2.5W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 3mΩ@10V,20A
• Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
• Type: 2 N-Channel
• Input Capacitance (Ciss@Vds): 1.1nF@12V
• Total Gate Charge (Qg@Vgs): [email protected]
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.5 grams.