BSM150GB170DN2E3256HDLA1 by Infineon Technologies – Specifications

Infineon Technologies BSM150GB170DN2E3256HDLA1 is a BSM150GB170DN2E3256HDLA1 from Infineon Technologies, part of the IGBTs. It is designed for 1.25kW 300A 1.7kV - IGBTs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 1.25kW
  • Collector Current (Ic): 300A
  • Collector-Emitter Breakdown Voltage (Vces): 1.7kV
  • Input Capacitance (Cies@Vce): 10nF@25V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 3.2V@15V,150A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on BSM150GB170DN2E3256HDLA1

Full Specifications of BSM150GB170DN2E3256HDLA1

Model NumberBSM150GB170DN2E3256HDLA1
Model NameInfineon Technologies BSM150GB170DN2E3256HDLA1
CategoryIGBTs
BrandInfineon Technologies
Description1.25kW 300A 1.7kV - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)1.25kW
Operating Temperature-
Collector Current (Ic)300A
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Input Capacitance (Cies@Vce)10nF@25V
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.2V@15V,150A

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