BSM25GB120DN2 by Infineon Technologies – Specifications

Infineon Technologies BSM25GB120DN2 is a BSM25GB120DN2 from Infineon Technologies, part of the IGBTs. It is designed for 200W 38A 1.2kV - IGBTs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 200W
  • Collector Current (Ic): 38A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Input Capacitance (Cies@Vce): 1.65nF@25V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 3V@15V,25A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on BSM25GB120DN2

Full Specifications of BSM25GB120DN2

Model NumberBSM25GB120DN2
Model NameInfineon Technologies BSM25GB120DN2
CategoryIGBTs
BrandInfineon Technologies
Description200W 38A 1.2kV - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)200W
Operating Temperature-
Collector Current (Ic)38A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)1.65nF@25V
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3V@15V,25A

Compare Infineon Technologies - BSM25GB120DN2 With Other 200 Models

Related Models - BSM25GB120DN2 Alternative

Scroll to Top