BSM25GD120DN2E3224BPSA1 by Infineon Technologies – Specifications

Infineon Technologies BSM25GD120DN2E3224BPSA1 is a BSM25GD120DN2E3224BPSA1 from Infineon Technologies, part of the IGBTs. It is designed for 200W 35A 1.2kV - IGBTs ROHS. This product comes in a - package and is sold as Tray. Key features include:

  • Power Dissipation (Pd): 200W
  • Collector Current (Ic): 35A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Input Capacitance (Cies@Vce): 1.65nF@25V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 3V@15V,25A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on BSM25GD120DN2E3224BPSA1

Full Specifications of BSM25GD120DN2E3224BPSA1

Model NumberBSM25GD120DN2E3224BPSA1
Model NameInfineon Technologies BSM25GD120DN2E3224BPSA1
CategoryIGBTs
BrandInfineon Technologies
Description200W 35A 1.2kV - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTray
BatteryNo
ECCNEAR99
Power Dissipation (Pd)200W
Operating Temperature-
Collector Current (Ic)35A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)1.65nF@25V
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3V@15V,25A

Compare Infineon Technologies - BSM25GD120DN2E3224BPSA1 With Other 170 Models

Related Models - BSM25GD120DN2E3224BPSA1 Alternative

Scroll to Top