BSM35GD120DN2E3224BPSA1 by Infineon Technologies – Specifications

Infineon Technologies BSM35GD120DN2E3224BPSA1 is a BSM35GD120DN2E3224BPSA1 from Infineon Technologies, part of the IGBTs. It is designed for 280W 50A 1.2kV - IGBTs ROHS. This product comes in a - package and is sold as Tray. Key features include:

  • Power Dissipation (Pd): 280W
  • Collector Current (Ic): 50A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Input Capacitance (Cies@Vce): 2nF@25V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 3.2V@15V,35A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on BSM35GD120DN2E3224BPSA1

Full Specifications of BSM35GD120DN2E3224BPSA1

Model NumberBSM35GD120DN2E3224BPSA1
Model NameInfineon Technologies BSM35GD120DN2E3224BPSA1
CategoryIGBTs
BrandInfineon Technologies
Description280W 50A 1.2kV - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTray
BatteryNo
ECCNEAR99
Power Dissipation (Pd)280W
Operating Temperature-
Collector Current (Ic)50A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)2nF@25V
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.2V@15V,35A

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