BSO080P03NS3 G by Infineon Technologies – Specifications

Infineon Technologies BSO080P03NS3 G is a BSO080P03NS3 G from Infineon Technologies, part of the MOSFETs. It is designed for 30V 12A 8mΩ@14.8A,10V 1.6W 3.1V@150uA 1PCSPChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 12A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@14.8A,10V
• Power Dissipation (Pd): 1.6W
• Gate Threshold Voltage (Vgs(th)@Id): 3.1V@150uA
• Type: 1PCSPChannel
• Input Capacitance (Ciss@Vds): 6.75nF@15V
• Total Gate Charge (Qg@Vgs): 81nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.