BSO130P03S H by Infineon Technologies – Specifications

Infineon Technologies BSO130P03S H is a BSO130P03S H from Infineon Technologies, part of the MOSFETs. It is designed for 30V 11.7A 9.9mΩ@10V,11.7A 2.36W 1.5V@140uA 1PCSPChannel DSO-8 MOSFETs ROHS. This product comes in a DSO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 11.7A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.9mΩ@10V,11.7A
  • Power Dissipation (Pd): 2.36W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@140uA
  • Reverse Transfer Capacitance (Crss@Vds): 580pF@25V
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 2.6nF@25V
  • Total Gate Charge (Qg@Vgs): 61nC@0~10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on BSO130P03S H

Full Specifications of BSO130P03S H

Model NumberBSO130P03S H
Model NameInfineon Technologies BSO130P03S H
CategoryMOSFETs
BrandInfineon Technologies
Description30V 11.7A 9.9mΩ@10V,11.7A 2.36W 1.5V@140uA 1PCSPChannel DSO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)11.7A
Drain Source On Resistance (RDS(on)@Vgs,Id)9.9mΩ@10V,11.7A
Power Dissipation (Pd)2.36W
Gate Threshold Voltage (Vgs(th)@Id)1.5V@140uA
Reverse Transfer Capacitance (Crss@Vds)580pF@25V
Type1PCSPChannel
Input Capacitance (Ciss@Vds)2.6nF@25V
Total Gate Charge (Qg@Vgs)61nC@0~10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Infineon Technologies - BSO130P03S H With Other 200 Models

Related Models - BSO130P03S H Alternative

Scroll to Top