BSO130P03SHXUMA1 by Infineon Technologies – Specifications

Infineon Technologies BSO130P03SHXUMA1 is a BSO130P03SHXUMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 9.2A 1.56W 13mΩ@11.7A,10V 2.2V@140uA 1PCSPChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 9.2A
  • Power Dissipation (Pd): 1.56W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 13mΩ@11.7A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@140uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 3.52nF@25V
  • Total Gate Charge (Qg@Vgs): 81nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of BSO130P03SHXUMA1

Model NumberBSO130P03SHXUMA1
Model NameInfineon Technologies BSO130P03SHXUMA1
CategoryMOSFETs
BrandInfineon Technologies
Description30V 9.2A 1.56W 13mΩ@11.7A,10V 2.2V@140uA 1PCSPChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)9.2A
Power Dissipation (Pd)1.56W
Drain Source On Resistance (RDS(on)@Vgs,Id)13mΩ@11.7A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@140uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)3.52nF@25V
Total Gate Charge (Qg@Vgs)81nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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