BSO200P03SHXUMA1 by Infineon Technologies – Specifications

Infineon Technologies BSO200P03SHXUMA1 is a BSO200P03SHXUMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 7.4A 1.56W 20mΩ@9.1A,10V 1.5V@100uA 1PCSPChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 7.4A
  • Power Dissipation (Pd): 1.56W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 20mΩ@9.1A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@100uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 2.33nF@25V
  • Total Gate Charge (Qg@Vgs): 54nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of BSO200P03SHXUMA1

Model NumberBSO200P03SHXUMA1
Model NameInfineon Technologies BSO200P03SHXUMA1
CategoryMOSFETs
BrandInfineon Technologies
Description30V 7.4A 1.56W 20mΩ@9.1A,10V 1.5V@100uA 1PCSPChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)7.4A
Power Dissipation (Pd)1.56W
Drain Source On Resistance (RDS(on)@Vgs,Id)20mΩ@9.1A,10V
Gate Threshold Voltage (Vgs(th)@Id)1.5V@100uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)2.33nF@25V
Total Gate Charge (Qg@Vgs)54nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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