BSO203P by Infineon Technologies – Specifications

Infineon Technologies BSO203P is a BSO203P from Infineon Technologies, part of the MOSFETs. It is designed for 20V 8.2A 2W 21mΩ@8.2A,4.5V 1.2V@100uA 2 P-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 8.2A
  • Power Dissipation (Pd): 2W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 21mΩ@8.2A,4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 1.2V@100uA
  • Type: 2 P-Channel
  • Input Capacitance (Ciss@Vds): 2.242nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on BSO203P

Full Specifications of BSO203P

Model NumberBSO203P
Model NameInfineon Technologies BSO203P
CategoryMOSFETs
BrandInfineon Technologies
Description20V 8.2A 2W 21mΩ@8.2A,4.5V 1.2V@100uA 2 P-Channel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOIC-8
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)8.2A
Power Dissipation (Pd)2W
Drain Source On Resistance (RDS(on)@Vgs,Id)21mΩ@8.2A,4.5V
Gate Threshold Voltage (Vgs(th)@Id)1.2V@100uA
Type2 P-Channel
Input Capacitance (Ciss@Vds)2.242nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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