BSO203P H by Infineon Technologies – Specifications

Infineon Technologies BSO203P H is a BSO203P H from Infineon Technologies, part of the MOSFETs. It is designed for 20V 7A 1.6W 21mΩ@4.5V,8.2A 1.2V@50uA 2 P-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 7A
  • Power Dissipation (Pd): 1.6W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 21mΩ@4.5V,8.2A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.2V@50uA
  • Type: 2 P-Channel
  • Input Capacitance (Ciss@Vds): 3.75nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of BSO203P H

Model NumberBSO203P H
Model NameInfineon Technologies BSO203P H
CategoryMOSFETs
BrandInfineon Technologies
Description20V 7A 1.6W 21mΩ@4.5V,8.2A 1.2V@50uA 2 P-Channel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)7A
Power Dissipation (Pd)1.6W
Drain Source On Resistance (RDS(on)@Vgs,Id)21mΩ@4.5V,8.2A
Gate Threshold Voltage (Vgs(th)@Id)1.2V@50uA
Type2 P-Channel
Input Capacitance (Ciss@Vds)3.75nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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