Infineon Technologies BSO211PH is a BSO211PH from Infineon Technologies, part of the MOSFETs. It is designed for 20V 4A 1.6W 67mΩ@4.6A,4.5V 1.2V@25uA 2 P-Channel FCBGA-532(23x23) MOSFETs ROHS. This product comes in a FCBGA-532(23x23) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 4A
- Power Dissipation (Pd): 1.6W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 67mΩ@4.6A,4.5V
- Gate Threshold Voltage (Vgs(th)@Id): 1.2V@25uA
- Type: 2 P-Channel
- Input Capacitance (Ciss@Vds): 1.095nF@15V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on BSO211PH
Full Specifications of BSO211PH
Model Number | BSO211PH |
Model Name | Infineon Technologies BSO211PH |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 20V 4A 1.6W 67mΩ@4.6A,4.5V 1.2V@25uA 2 P-Channel FCBGA-532(23x23) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | FCBGA-532(23x23) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 20V |
Continuous Drain Current (Id) | 4A |
Power Dissipation (Pd) | 1.6W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 67mΩ@4.6A,4.5V |
Gate Threshold Voltage (Vgs(th)@Id) | 1.2V@25uA |
Type | 2 P-Channel |
Input Capacitance (Ciss@Vds) | 1.095nF@15V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |
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